The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy.
The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of
GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations.
Semi-insulating Sic substrate materials also exhibit excellent optical properties.
The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses.
*Please contact our sales for more detailed information.
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Specifications
6-inch
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Diameter 150.0mm+0mm/-0.2mm
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Surface Orientation {0001}±0.2°
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Primary Flat Orientation /
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Secondary Flat Orientation /
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Primary Flat Length Notch
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Secondary Flat Length None
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Notch Orientation ±1.0°
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Notch Depth None1mm+0.25mm/-0mm from edge
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Notch Angle 90°+5°/-1°
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Thickness 500.0um±25.0um
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Type Semi-insulating
*Please contact our sales for more detailed information.
>Contact us
Specifications
8-inch
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Diameter 200.0mm+0mm/-0.5mm
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Surface Orientation {0001}±0.2°
-
Primary Flat Orientation /
-
Secondary Flat Orientation /
-
Primary Flat Length Notch
-
Secondary Flat Length None
-
Notch Orientation ±1.0°
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Notch Depth None1mm+0.25mm/-0mm from edge
-
Notch Angle 90°+5°/-1°
-
Thickness 500.0um±25.0um
-
Type Semi-insulating
